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mos transistor meaning in English

mos晶体管
金属氧化物半导体晶体管

Examples

  1. V groove mos transistor
    槽型栅金属氧化物半导体晶体管
  2. Vertical mos transistor
    垂直型金属氧化物半导体晶体管
  3. The paper gave detailed analysis of the structure working principle and characteristics of the bipolar junction mos transistor ( bjmosfet ) , a novel semiconductor device . this new device has shared the advantages of bjt and mos
    详细分析了一种新型半导体器件? ?双极压控场效应晶体管( bjmosfet )的结构特点、工作原理,这种器件拥有bjt和mos两者的优点。
  4. With the high development of the quantum circuits , the testability of the circuits will become a very serious problem . the method of testability design for rt circuits is proposed in the end of this paper , which has high testability and low hardware cost . only adding one extra mos transistor and two control ports , it can detect all open and short faults in rt circuits
    随着量子电路的飞速发展,由于其本身所特有的高集成度特点,电路的测试必然会成为越来越严重的问题,因此论文在最后就电路中常见的开路、短路故障提出了rt电路的可测试性设计方法,并针对具体的mobile电路进行了可测试性设计, pspice模拟结果表明达到了可测试的目的。
  5. In the fifth chapter , a new fully differential operational amplifier with voltage and current - mode negative feedback has been proposed , which can stabilize its quiescent operation point , using the characteristic of mos transistors which operate in the triode region acting as active variable resistor , a fully differential fourth - order chebyshev low - pass filter with tunable frequency and bessel low - pass filter with accurate group delay based on r - mosfet - c and operational amplifier has been designed
    第五章:提出了一种新的既具有电压共模负反馈又同时具有电流共模负反馈的全差分运算放大器电路,能较好地稳定电路的静态工作点,并应用mos管工作在线性区可作有源可变电阻用的特性设计得到了截止频率可连续调节的高性能r - mosfet - c 、运放结构切比雪夫( chebyshev )和精确群时延值贝塞尔( bessel )低通滤波器。
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